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2N3905 Discrete POWER & Signal Technologies 2N3905 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 40 5.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3905 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N3905 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current I C = 1.0 mA, IB = 0 I C = 10 A, I E = 0 I E = 10 A, IC = 0 VCE = 30 V, VOB = 3.0 V VCE = 30 V, VOB = 3.0 V 40 40 5.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 0.1 mA VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 50 mA VCE = 1.0 V, IC = 100 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA 30 40 50 30 15 150 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.25 0.40 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS Cob Cib hfe hfe hre hie hoe NF Output Capacitance Input Capacitance Small-Signal Current Gain Small-Signal Current Gain Voltage Feedback Ratio Input Impedance Output Impedance Noise Figure VCE = 5.0 V, IC = 100 A, RS = 1.0 k, BW = 10 Hz to 15.7 KHz VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz I C = 10 mA, VCE = 20 V, f = 100 MHz I C = 1.0 mA, VCE =10 V, f = 1.0 KHz 2.0 50 0.1 0.5 1.0 200 5.0 8.0 40 5.0 x10 -4 4.5 10 pF pF k mhos dB SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, ICS = 10 mA, I B1 = 1.0 mA ,VOB ( off ) = 3.0 V VCC = 3.0 V, ICS = 10 mA, I B1 = IB2 = 1.0 mA 35 35 200 60 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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